Pass-transistors pMOS based 8T SRAM cell for layout compaction

摘要

We present a new 8-transistor (8T) SRAM cell design that uses pMOS devices as cell pass transistors controlled by the write word-line signal. The main advantage of this schema is the composition of a balanced 8T SRAM cell having four nMOS and four pMOS transistor that enables a more compact layout and area reduction. An exhaustive analysis about the impact on key parameters such as leakage consumption, write and read stability margins, read delay time and single event upsets for the new cell is reported. A trade-off between cell area reduction and write noise margin improvement is observed, while the remaining parameters are not impacted.