Test results of radiation effects including total ionizing dose (TID) and single event effects (SEE) are presented for a 4Mb nitride read-only memory (NROM) flash memory, fabricated with a 0.18um commercial technology. The stand-by current and postirradiation memory content were used to characterize the response of radiation-induced failures. The supply current was observed to increase at a total dose threshold of 4Skrad(Si), and functional failures occured at a total dose threshold of 92krad(Si). The single event latch-up LET threshold of the NROM flash memory was between 32.2 MeV-cm~2-mg~(-1)and 42 MeVcm~2-mg~(-1).The saturated static bit upset crosssection was 3.4x10~(-11 )cm~2/bit and the charged state was more sensitive to the heavy ion irradiation in NROM memory cell.
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