A Simulation Study of a Novel Dual-Channel Body-Tied MOSFET

摘要

In this work, a novel device called dual-channel body-tied (DCBT) MOSFET is proposed. According to numerical simulations, the DCBT MOSFET can reduce the lattice temperature about 51.6% in top and 53.8% in bottom channel, respectively, while maintain the desirable short-channel characteristics, compared with the conventional non-body-tied DC structure.