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BODY-TIED MOSFET DEVICE WITH STRAINED ACTIVE AREA
BODY-TIED MOSFET DEVICE WITH STRAINED ACTIVE AREA
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机译:带有受约束有源区的车身贴装MOSFET器件
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摘要
A body-tied MOSFET device and method of fabrication are presented. In the method of fabrication, oxygen diffuses and reacts down a first axis of a pFET or nFET. This results in a partial oxidation of a buried-oxide/silicon island interface. The partial oxidation produces a thickness variation in the silicon island that creates a stress along the first axis. The stress along the first axis modifies a device characteristic of the FET. Oxidation along a second, perpendicular, axis may also be inhibited. The partial oxidation may be incorporated in SOI and STI based process flows. In addition, a dual-gate oxidation process may further enhance device characteristics.
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