A novel Monte Carlo simulation code for linewidth measurement in critical dimension scanning electron microscopy

摘要

Besides the use of the most sophisticated equipment, accurate nanometrology for the most advanced CMOS processes requires that the physics of image formation in scanning electron microscopy (SEM) being modeled to extract critical dimensions. In this paper, a novel Monte Carlo simulation code based on the energy straggling principle is presented, which includes original physical models for electron scattering, the use of a standard Monte Carlo code for tracking and scoring, and the coupling with a numerical device simulator to calculate charging effects.