首页> 外国专利> Electron beam dose control for scanning electron microscopy and critical dimension measurement instruments

Electron beam dose control for scanning electron microscopy and critical dimension measurement instruments

机译:用于扫描电子显微镜和临界尺寸测量仪器的电子束剂量控制

摘要

A system and method for controlling electron exposure on image specimens by adjusting a raster scan area in-between scan frame cycles. A small, zoomed-in, scan area and the surrounding area are flooded with positive charge for a number of frame cycles between scan frames to reduce the voltage differential between the scan area and surrounding area, thereby reducing the positive charge build-up which tends to obscure small features in scanned images. The peak current into a pixel element on the specimen is reduced by scanning the beam with a line period that is very short compared to regular video. Frames of image data may further be acquired non-sequentially, in arbitrarily programmable patterns. Alternatively, an inert gas can be injected into the scanning electron microscope at the point where the electron beam impinges the specimen to neutralize a charge build-up on the specimen by the ionization of the inert gas by the electron beam.
机译:一种通过调整扫描帧周期之间的光栅扫描区域来控制图像样本上电子曝光的系统和方法。在扫描帧之间的多个帧周期内,小的放大的扫描区域和周围区域会充满正电荷,以减小扫描区域和周围区域之间的电压差,从而减少了正电荷积聚的趋势使扫描图像中的细微特征模糊不清。通过以与常规视频相比非常短的线周期扫描光束,可以减少进入样品上像素元素的峰值电流。可以进一步以任意可编程的模式非顺序地获取图像数据的帧。或者,可以在电子束撞击样品的位置将惰性气体注入扫描电子显微镜中,以中和通过电子束使惰性气体电离而在样品上累积的电荷。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号