Slow wave and dielectric quasi-TEM modes of Metal-Insulator-Semiconductor (MIS) structure Through Silicon Via (TSV) in signal propagation and power delivery in 3D chip package

摘要

The effects of slow wave and dielectric quasi-TEM modes due to MIS (Metal-Insulator-Semiconductor) structure TSV (Through-Silicon-Via) are analyzed by using the proposed MIS TSV model and the measured results. Since MIS TSV has larger surface, longer length, and smaller insulator thickness than those of conventional on-chip metal lines, the stronger effects of slow wave and dielectric quasi-TEM modes of MIS structure on electrical performance appear. After obtaining the MIS structure TSV model with the dimension variables based on the measurement and 3D full wave simulation, two slow wave and dielectric quasi-TEM modes effects on MIS TSV electrical characteristics are analyzed in the aspects of signal propagation and power delivery.