A study on fine pitch Au and Cu WB integrity vs. Ni thickness of Ni/Pd/Au bond pad on C90 low k wafer technology for high temperature automotive

摘要

For high temperature automotive application, IC products are required to pass stringent high temperature storage stress test (e.g. 5000hrs at 150 deg C), hence requires reliable wire bonds. Such requirement is especially challenging with fine pitch Au & Cu wire bond (e.g. bond pad pitch > 70um and bonded ball diameter < 58um), more-so on low k wafer technology with bond-over-active requirement.