Molybdenum (Mo) thin film back contact layers for thin film CuIn(1−x)GaxSe2 (CIGS) solar cells were deposited onto soda lime glass substrates using a direct current (DC) planar magnetron sputtering deposition technique. Requirements for the Mo thin film as a back contact layer for CIGS solar cells are various. Sheet resistance, contact resistance to the CIGS absorber, optical reflectance, surface morphology, and adhesion to the glass substrate are the most important properties that the Mo thin film back contact layer must satisfy [1]. Experiments were carried out under various combinations of sputtering power and working gas pressure, for it is well known that mechanical, optical, morphological, and electrical property of a sputter-deposited Mo thin film are dependent on these process parameters [2].
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机译：沉积用于薄膜CuIn （1-x） Ga x Se 2 （CIGS）太阳能电池的钼（Mo）薄膜背接触层使用直流（DC）平面磁控溅射沉积技术将其涂在钠钙玻璃基板上。 Mo薄膜作为CIGS太阳能电池的背接触层的要求是多种多样的。薄层电阻，与CIGS吸收剂的接触电阻，光学反射率，表面形貌以及与玻璃基板的粘合性是Mo薄膜背面接触层必须满足的最重要的特性[1]。实验是在溅射功率和工作气压的各种组合下进行的，因为众所周知，溅射沉积的Mo薄膜的机械，光学，形态和电学性质取决于这些工艺参数[2]。
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