Lasing in GaAs1−xBix/GaAs thin film cavity with low-temperature-dependent oscillation wavelength

机译：GaAs 1-x Bi x / GaAs薄膜腔激射

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Lasing oscillation from GaAs1−xBix/GaAs thin film with Fabry-Perot cavity was performed for the first time by photo-pumping. The lasing emission peak energy decreased at a constant rate of −0.18 meV/K, which is only 40 % of the temperature coefficient of the GaAs band gap.

机译：首次通过光泵浦法从具有Fabry-Perot腔的GaAs 1-x Bi x / GaAs薄膜产生激光振荡。激光发射峰能量以-0.18 meV / K的恒定速率降低，仅为GaAs带隙温度系数的40％。

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《22nd IEEE International Semiconductor Laser Conference》|2010年|P.205-206|共2页
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Lasing in GaAs1−xBix/GaAs thin film cavity with low-temperature-dependent oscillation wavelength

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