202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

机译：大功率外腔InAs / GaAs量子点激光器的202nm连续调谐

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Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.

机译：展示了可记录的宽可调大功率外腔InAs / GaAs量子点二极管激光器。在调谐范围的中心部分实现了455mW的最大输出功率和> 45dB的侧模抑制比。

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《22nd IEEE International Semiconductor Laser Conference》|2010年|P.172-173|共2页
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中图分类半导体激光器件;
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1. Ultrabroad tuning range (100 nm) of external-cavity continuous-wave high-power semiconductor lasers based on a single InGaAs quantum well [J] . Podoskin Alexandr, Golovin Vyacheslav, Gavrina Polina, Applied optics . 2019,第33期

机译：基于单个IngaAs量子的外腔连续波大功率半导体激光器超高频调谐范围（100nm）
2. High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers [J] . D.I. Nikitichev, Y. Ding, M. Ruiz, Applied physics . 2011,第3期

机译：大功率无源锁模锥形InAs / GaAs量子点激光器
3. High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers [J] . D. I. Nikitichev, Y. Ding, M. Ruiz, Applied Physics B: Lasers and Optics . 2011,第3期

机译：大功率无源锁模锥形InAs / GaAs量子点激光器
4. 202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser [C] . {missing} IEEE International Semiconductor Laser Conference . 2010

机译：从高功率外腔INAS / GAAS量子点激光器连续调谐
5. Characterization and modeling of 1.3 mum InAs quantum-dot lasers. [D] . Dikshit, Amit A. 2006

机译：1.3毫米InAs量子点激光器的表征和建模。
6. Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers [O] . HX Zhao, SF Yoon, CZ Tong, 2011

机译：1.3μmInAs / GaAs自组装量子点激光器的热效应和小信号调制
7. High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers [O] . Nikitichev, D. I., Ding, Y., Ruiz, M., 2011

机译：大功率无源锁模锥形InAs / GaAs量子点激光器

202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

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