Raman Spectra of the carbon films by pulsed laser deposition using C60 target

摘要

Carbon films were grown on single crystal silicon substrate by XeCl excimer pulsed laser deposition (PLD) and fullerene (C60) is used as a target. A detailed Raman analysis is presented here to investigate the structural change of the film and hence the result is compared with those of the films produced from graphite and camphor (C10H16O) targets deposited in the similar conditions. Raman analysis of the films obtained from C60 target indicates 3 distinct peaks located at 1357.4 cm⁻¹, 1529.3 cm⁻¹, 1592.1 cm⁻¹ named D peak, F (fullerene) peak and G peak respectively. High energetic pulsed laser causes polymeric semiconducting film which retains crystalline graphite structure. Such improved quality of film proves that C60 can be used as a better target material instead of graphite or camphor for semiconducting/optoelectronic applications.