首页> 外文会议>Electronic Design, Test and Application, 2010. DELTA '10 >Impact of Resistive-Bridging Defects in SRAM Core-Cell
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Impact of Resistive-Bridging Defects in SRAM Core-Cell

机译:SRAM核心单元中电阻桥接缺陷的影响

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In this paper, we present a study on the effects of resistive-bridging defects in the SRAM core-cell. The position of the resistive-bridges has been chosen taking in account an actual industrial core-cell layout. We have performed an extensive number of simulations, varying the resistance value of the defects, supply voltage, frequency and temperature. Experimental results show malfunctions not only within the defective core-cell, but also in other core-cells (defect-free) of the memory array. Static and dynamic faults, single-cell and double-cells faults have been found.
机译:在本文中,我们对SRAM核心单元中的电阻桥接缺陷的影响进行了研究。选择电阻桥的位置时要考虑到实际的工业核心单元布局。我们进行了大量的模拟,改变了缺陷的电阻值,电源电压,频率和温度。实验结果表明,不仅有缺陷的核心单元内部发生故障,而且存储器阵列的其他核心单元(无缺陷)也存在故障。发现了静态和动态故障,单电池和双电池故障。

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