Angular and strain dependence of heavy-ions induced degradation in SOI FinFETs

摘要

We studied the short- and long-term effects of heavy-ion strikes on SOI FinFET devices manufactured in a sub 32-nm CMOS process. The degradation of the device DC characteristics after irradiation strongly depends on the incidence angle, strain, and channel type, depending on the balance between damage to the high-k gate oxide and to the buried oxide. The Time-Dependent Dielectric Breakdown (TDDB) and the device parameter degradation kinetics are affected by the LET, ion fluence, and incidence angle. A reduction in TDDB is observed in irradiated FinFETs with respect to unirradiated ones.