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Study on the Trap Distribution in Polyimide Thin Film Based on TSDC Method

机译:基于TSDC方法的聚酰亚胺薄膜陷阱分布研究

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摘要

Electron traps in polyimide (PI) film were investigated by analyses of thermally stimulated depolarization current (TSDC). A broad α peak of TDSC was observed around 459K in PI which was ascribed to the release of space charge. Then we estimated electron trap levels in polyimide based on the theory of Simmons and found their distributed by Gaussian distribution in the range of 0.45~0.90eV. And compare the trap distributions of PI-SiO2 and PI-Al2O3 nano-composite films, give a picture of nano-particle effected on the properties of polymeric dielectric.
机译:通过分析热激发的去极化电流(TSDC),研究了聚酰亚胺(PI)膜中的电子陷阱。在PI中459K附近观察到TDSC的宽α峰,这归因于空间电荷的释放。然后根据Simmons理论估计了聚酰亚胺中的电子陷阱能级,发现它们在高斯分布下的分布范围为0.45〜0.90eV。并比较了PI-SiO2和PI-Al2O3纳米复合薄膜的陷阱分布,给出了纳米粒子对高分子电介质性能的影响。

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