Band alignment at electrode-organic interfaces

摘要

The band alignment at metal-organic interfaces has been extensively studied; however the electrodes in real devices often consist of metals modified with dielectric buffer layers. We demonstrate that interface dipole theory, originally developed to describe Schottky contacts at metal-semiconductor interfaces, can also accurately describe the injection barriers in real organic electronic devices (i.e, at electrode-organic interface). It is found that theoretically predicted hole injection barriers for various archetype metal-organic and metal-dielectric-organic structures are in excellent agreement with values extracted from experimental measurements.