Characterization of Cu_2O Thin Film grown by Molecular Beam Epitaxy

摘要

We report the growth of Cu_2O thin films on glass and MgO(100) substrates by molecular beam epitaxy. Crystal orientation of Cu_2O thin films on glass substrate were changed from (100) to (111) with increasing the deposition rate. The Cu_2O thin films were epitaxially grown on MgO(100) substrate with an orientation relationship of Cu_2O(110) // MgO(100). The film quality and electrical properties of Cu_2O thin films were changed with deposition rate. The slow deposition rate resulted in high conductivity and mobility, as well as good crystallinity and orientation.