Patterning of HfO_2 thin films using chemical solution and dielectric properties

摘要

HfO_2 precursor solutions were prepared by modification of alkoxide for patterning of HfO_2 films. The HfO_2 dots were patterned on Si substrate by inkjet printing method. The electrical properties of HfO_2 films prepared by inkjet printing method were almost same as the properties of the HfO_2 films prepared by spin-coating method. Additionally, the HfO_2 nanostructures were successfully patterned by nanoimprint method using the chemically-modified alkoxy-derived precursor solution.