首页> 外文会议>Electronics Packaging Technology Conference, 2009. EPTC '09 >Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces
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Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces

机译:Cu / Sn / Cu倒装芯片接合处的电迁移引起的故障

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We observed various EM-induced failures in current-stressed Cu/Sn/Cu flip-chip solder joints. EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) on the cathode interface, and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). We believe that the above various EM-induced failure modes were the result of different current-stressing densities and Joule heating at the cathode joint interfaces.
机译:我们观察到了在电流应力下的Cu / Sn / Cu倒装芯片焊点中各种由EM引起的故障。 EM诱导的Cu-pad消耗发生在阴极界面上的电流进入点(最大电流密度),而空洞发生在远离电流进入点的另一个接合角(最小电流密度)。我们认为,上述各种由EM引起的故障模式是由于阴极接头界面处不同的电流应力密度和焦耳热而导致的。

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