首页> 外文会议>Electronics Packaging Technology Conference, 2009. EPTC '09 >Bottom-up filling of Through Silicon Via (TSV) with Parylene as sidewall protection layer
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Bottom-up filling of Through Silicon Via (TSV) with Parylene as sidewall protection layer

机译:使用聚对二甲苯作为侧壁保护层自下而上填充硅穿孔(TSV)

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In this paper, we present our recent advances in streamlining via-last TSV process flow. Parylene deposition, which is of excellent conformability to the substrate landscape, was introduced into TSV blind via filling process to realize uniform sidewall protection. Simulation was made to analyze the impacts of parylene sidewall on the electric field distribution inside a blind via with high aspect ratios during electroplating, which indicates that a uniform plating current density distribution may be achieved with the help of the parylene sidewall, and thus a void-free filling can be guaranteed. Then in experimental microfabrication runs, with parylene sidewall protection, we achieved bottom-up filling of blind TSV of large ratio aspect at a higher rate. Besides, during our experiments, a ¿bottom-up plus non-bottom-up¿ filling methodology is proposed and the microfabrication trials demonstrate its potential capability of filling TSV blind via at a much higher rate.
机译:在本文中,我们介绍了我们在简化过孔TSV工艺流程方面的最新进展。聚对二甲苯沉积物具有极佳的基板表面顺应性,可通过填充工艺引入TSV盲孔中,以实现均匀的侧壁保护。通过仿真分析了聚对二甲苯侧壁对电镀过程中高纵横比的盲孔内部电场分布的影响,这表明借助聚对二甲苯侧壁可以实现均匀的电镀电流密度分布,从而避免了空隙-可以保证无填充。然后,在实验微细加工过程中,借助聚对二甲苯侧壁保护,我们以较高的比率实现了自底向上填充大比例长宽比盲孔TSV的目的。此外,在我们的实验过程中,提出了一种“自下而上加非自上而下”的填充方法,并且微加工试验证明了其以更高的速率填充TSV盲孔的潜在能力。

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