Mechanical and Electrical Properties of Ga-Doped ZnO Films Deposited on Flexible Substrate by DC Magnetron Sputtering

摘要

Ga-doped ZnO films were deposited on polyethylene terephthalate (PET) substrate by dc magnetron sputtering using a high density GZO target (doped with 6.65 wt% Ga_2O_3) without substrate heating. We investigated electrical, structural, and mechanical properties of GZO films deposited under various total gas pressures (P_(tot)- GZO films deposited at P_(tot) of 2.0 Pa showed the lowest resistivity (2.91 × 10~(-2) Ωcm), which could be attributed to higher crystallinity of the film. Also, this GZO film showed the lowest change in resistance (ΔR/R_0 = 0.3) for the dynamic bending test.