Analysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based Nanopillar

摘要

We have made a GaN-based single nanopillar with a diameter of 300nm using the focused ion beam (FIB) technique. The micro-photoluminescence (μ-PL) from the embedded GaN/InGaN multi-quantum wells reveals a blue shift of 68.3 meV in energy. In order to explain the spectrum shift, we have developed a valence force field model to study the strain relaxation mechanism in a single GaN-based nanopillar structure. The strain distribution and strain induced polarization effect inside the multiple quantum wells is added to our self-consistent Poisson, drift-diffusion, and Schrodinger solver to study the spectrum shift of μ-PL.