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Fabrication of STO Buffer Films on MgO Substrates by the MOD Method

机译:MOD方法在MgO衬底上制备STO缓冲膜

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We fabricated SrTiO_3 (STO) thin films, which are expected to be used as buffer layers on MgO substrates, by the metal-organic decomposition (MOD) method, and evaluated the properties of the films. By introducing a 2-step heat treatment and optimizing the precursor temperature, we could improve the full width at half maximum (FWHM) values of the rocking curves up to 1.81 deg in the X-ray diffraction (XRD) measurements of the STO films on MgO substrates. The minimum FWMH value of the in-plane rocking curves of the films was 2.60 deg and the films had a cube-on-cube structure on the MgO substrates. Furthermore, the root mean square (rms) roughness values of the surfaces of the STO thin films derived from atomic force microscopy (AFM) were 2.11-5.37 nm.
机译:我们通过金属有机分解(MOD)方法制备了SrTiO_3(STO)薄膜,该薄膜有望用作MgO衬底上的缓冲层,并评估了薄膜的性能。通过引入两步热处理并优化前驱物温度,我们可以在STO薄膜的X射线衍射(XRD)测量中将摇摆曲线的半峰全宽(FWHM)值提高到1.81度。 MgO基材。膜的面内摇摆曲线的最小FWMH值为2.60度,并且膜在MgO衬底上具有立方体对立方体的结构。此外,由原子力显微镜(AFM)得出的STO薄膜表面的均方根(rms)粗糙度值为2.11-5.37 nm。

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