Boron doped nanocrystalline silicon and amorphous silicon films have been prepared under differentpower pressure conditions. Intrinsic silicon absorber layers have been deposited on p-layers of differentcrystallinities by PECVD method. Structural studies of p/i configuration have been done by Raman scatteringstudies. Crystalline volume fraction of i-layer increases as that of p-layer increases, the effect being more prominentnear p/i interface. The average grain size of absorber layer decreases from 9.2 nm to 7.2 nm and density ofcrystallites increases as crystallinity of the p-layer increases. The short circuit current and fill factor of solar cellincreases as the crystallinity of p-layer increases.
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