Effects of Buffer Layer on Hetero-Epi-Growth of SiCGe on 6H-SiC

摘要

Growth of SiCGe ternary alloy on 6H-SiC in a conventional hot-wall CVD system was initially studied. SiH_4, GeH_4 and C_3H_8 were employed as silicon, germanium and carbon source, respectively, while H_2 was employed as the carrier gas. To reduce the heavy lattice mismatch between the film and the substrate, a 3C-SiC buffer layer was inserted between them in a CVD process. Optimizing the growth conditions was discussed. The samples were measured by means of SEM, SAXRD (Small Angle X-Ray Diffraction).It is shown that use of the 3C-SiC buffer layer is an effective way to improve the quality of the ternary alloy.