Structural, Optical and Electrical Properties of Nitrogen DopedAmorphous Carbon Thin Films Deposited by Microwave SurfaceWave Plasma CVD

摘要

The n-type conductivity of nitrogen doped amorphous carbon films have been grown on p-type silicon, quartz and heattolerant (up to 260°C) flexible polytetrafluoroethene plastic substrates by microwave surface wave plasma chemical vapordeposition at low temperature (<100°C). For film deposition at various gas composition pressures ranging from 50 to 90 Pain the CVD chamber, we used argon as carrier gas, nitrogen as dopant and methane as carbon plasma source. Photovoltaiceffects of the films as well as their chemical composition, bonding and structural properties have been studied. The X-raysphotoelectron spectroscopy measurement shows that nitrogen content in the films grown on plastic substrates is highercompared with the films grown on quartz substrates. The optical measurements show that the optical band gap of the filmsgrown on plastic substrate is lower compared with the films grown on quartz at the same parameters. The temperaturedependence conductivity and photoresponse measurements show that the electrical conductivity of the films grown on plasticsubstrates is much higher compared with the films grown on quartz substrates.