Cu(In,Ga)Se2 THIN FILM SOLAR CELLS ON FLEXIBLE SUBSTRATES

摘要

Main advantages of a flexible, Cu(In,Ga)Se2 based, thin film technology for space applications are an improvedpower to weight ratio plus a superior radiation hardness in comparison to established technologies. This contribution reports on efforts to produce high efficiency, Cu(In,Ga)Se2 single cell thin film devices with a total area of up to 16.5cm2 on Ti-foil using a three-stage co-evaporation process. Fabricated devices are characterised via I-V-measurements under AM1.5 and AM0 illumination. Starting point for the development is the transfer of highly efficient small area devices from rigid glass substrates to flexible Ti-foil. In a second step the scale-up is performed on the titanium foil substrate. Further more the basic tolerance of Cu(In,Ga)Se2 based thin film devices to reverse bias conditions is examined via the performance characterisation before and after exposure.