首页> 外文会议>Material Science and Material Properties for Infrared Optoelectronics >SiO_x thin films as material for uncooled microbolometer
【24h】

SiO_x thin films as material for uncooled microbolometer

机译:SiO_x 薄膜作为非冷却微辐射热计的材料

获取原文

摘要

Composite metal-dielectric SiO_x films with concentration of metal varied on thickness in dielectric matrix SiO_x are investigated. The reflectance and transmittance of the samples at normal incidence were measured in the 2-12 microns wavelength range. In the wavelength range of 2-8,5 microns absorption of the films is about 90%, in more long-wavelength area 8,5-12 microns absorption is equal 70 - 80%. The optical properties of these gradient layers are simulated, and the results of simulation are compared with experimental data. In a range of temperatures 283-390K thermosensitive properties of SiO_x films are investigated and values of temperature coefficient of resistance is determined. These coatings can be used as a sensitive layer of uncooled microbolometers.
机译:研究了在电介质基体SiO_x中金属浓度随厚度变化的复合金属电介质SiO_x 薄膜。在2-12微米的波长范围内测量了法线入射时样品的反射率和透射率。在2-8,5微米的波长范围内,薄膜的吸收率约为90%,在更长的波长区域中,8,5-12微米的吸收率等于70-80%。模拟了这些梯度层的光学性质,并将模拟结果与实验数据进行了比较。在283-390K的温度范围内,研究了SiO_x 薄膜的热敏性能,并确定了电阻的温度系数值。这些涂层可用作未冷却的微辐射热计的敏感层。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号