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Pad Conditioning and Scale-up Issues Between 200 and 300 mm Polishing

机译:200到300毫米抛光之间的抛光垫修整和放大问题

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Polish rate reduction and significant uniformity excursions were observed when polishing 300 mm wafers with fumed silica slurry using pad conditioners that were optimized for 200 mm polishing. Uniformity issues could be rectified with more aggressive conditioning, but in most cases the polish rate could not be fully recovered over the range of conditioning aggressiveness studied. Significantly higher removal rates, compared to fumed slurry, were observed under similar process conditions when colloidal slurry was used in 300 mm polishing. While the magnitude of some of these responses are likely due to relative slurry flow rate differences between the 200 and 300 mm platforms, these results are consistent with a pad asperity wear mechanism contributing to the reduced polish rates on the 300 mm platform. Inspection of the pad surface statistics from both 200 and 300 mm polishing indicates that the degree of pad surface wear and the resulting damage to the surface asperity structure is greater on 300 mm.
机译:当使用针对200 mm抛光进行了优化的抛光垫修整器,用气相法二氧化硅浆料抛光300 mm晶片时,观察到抛光速率降低和明显的均匀性偏移。均匀性问题可以通过更具侵略性的修整来纠正,但在大多数情况下,在研究的条件冲进性范围内,抛光率无法完全恢复。当在300 mm抛光中使用胶体浆料时,在类似的工艺条件下,与气相浆料相比,去除率显着提高。虽然其中一些响应的大小可能是由于200和300 mm平台之间的相对浆料流速差异引起的,但这些结果与垫粗糙处理机制一致,这有助于降低300 mm平台的抛光速率。从200毫米和300毫米抛光中检查垫的表面统计数据表明,在300毫米处,垫表面的磨损程度以及对表面凹凸结构的损坏程度更大。

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