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Extended Chamber Matching and Repeatability Study for Chrome Etch

机译:铬蚀刻的扩展腔室匹配和可重复性研究

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Shrinking design rules, optical proximity correction and advanced phase shifting techniques require new methods of photomask manufacturing. The Applied Materials Centura~(~R) photomask etch chamber leverages Applied Materials' extensive etch experience to provide an innovative dry etch solution to the mask dry etch challenges for < 0.13 μm device generations. Repeatable, consistent, stable etch performance is critical for advanced mask manufacturing. An extended chamber matching and repeatability study for chrome etch found that stable chrome and photoresist etch rates (and therefore selectivities) are produced on the Applied Materials Centura photomask etch chamber. The etch responses are consistent mask to mask as well as chamber to chamber. Prior to the extended study, pumping efficiencies, RF source and bias calibrations and optical emission spectral responses were compared. Since the study was performed at several different sites, the metrology tools were calibrated using masks specifically designed for this purpose. The marathon testing illustrates the stable etch performance over time.
机译:缩小的设计规则,光学邻近校正和先进的相移技术需要光掩模制造的新方法。 Applied Materials Centura〜(R)光掩模蚀刻室利用Applied Materials丰富的蚀刻经验,提供了创新的干法蚀刻解决方案,以应对小于0.13μm器件世代的掩模干法蚀刻挑战。可重复,一致,稳定的蚀刻性能对于先进的掩模制造至关重要。对铬蚀刻进行的扩展腔室匹配和可重复性研究发现,在Applied Materials Centura光掩模蚀刻腔室上可产生稳定的铬和光致抗蚀剂蚀刻速率(因此具有选择性)。蚀刻响应是一致的掩模到掩模以及腔室到腔室。在进行扩展研究之前,先对泵浦效率,RF源和偏置校准以及光发射光谱响应进行了比较。由于研究是在几个不同的地点进行的,因此使用专门为此目的设计的掩模对计量工具进行了校准。马拉松测试说明了随时间推移的稳定刻蚀性能。

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