Hydrogenated amorphous silicon (a-Si:H) films of varying thickness were deposited on glass substrates using plasma enhanced chemical vapor deposition (PECVD). Crystallization of a-Si:H films was studied using x-ray diffraction (XRD) and surface morphology was observed using optical microscope. XRD analysis showed that crystallization of a-Si:H occurs at temperature as low as 165°C . Optical microscope pictures show a decrease in the grain size upon increasing anneal temperature. Different shapes of grains were produced at different annealing temperatures. The resistivity of the films was found to be in the range of 0.1-5 Ω.cm after complete crystallization.
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