In-situ kinetics study of gas phase formation in the system Ga/In-AsCI_3-HCl-H_2 by UV - spectroscopy

摘要

In this paper we present the experimental results on kinetic research of a gas phase formation in the system Ga/In-AsCl_3-HCl-H_2 which we use for the preparation of high quality InP/ InGaAs multilayers with thickness less than 100 nm by I -VPE method. This experimental data are received in-situ by UV-spectroscopy when combined In-Ga source is used. The analysis of kinetic processes in a zone of the source is necessary to understand the influence of such parameters as temperature, gas carrier flow rates, In/Ga source surface area, input concentrations of chloride containing components on composition of gas phase. It is shown that the going completeness of the heterogeneous reactions strongly depends on the Ga-In source surface area and input flow rate under other equal parameters. Besides analysing of the gas phase composition it is necessary to take into account GaCl_ (liq.)=GaCl ( g ) equilibrium at the temperature below 800K.