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Material Science and Material Properties for Infrared Optoelectronics

召开年：2000
召开地：Kiev(UA)
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1.BAND GAP OF (CdTe)_m/( Cd_(1-x)Mn_xTe)_n SUPERLATTICES

机译：（CdTe）_m /（Cd_（1-x）Mn_xTe）_n超晶格的带隙
- 作者：Melnichuk S.V.;MikhailevskiYa.I.;Rarenko I.M.;Yurijchuk I.M.
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- Cd_(1-x)Mn_xTe;
- CdTe;
- superlattice;
- band structure;
- tight-binding method;
2.BARRIERS HEIGHT AND CURRENT PASSAGE MECHANISMS IN SCHOTTKY DIODES ON THE BASE OF Mn_xHg_(1-x)Te

机译：Mn_xHg_（1-x）Te的肖特基二极管的壁垒高度和电流通道机理
- 作者：A.V.Markov;O.O.Bodnaruk;O.V.Lazareva;S.E.Ostapov;I.M.Rarenko;R.A.Shevchuk
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- infrared detector;
- narrow gap semiconductor;
- solid solution;
- energy gap;
- schottky diode;
3.CdTe Substrate Purification from Impurities by Gettering

机译：通过吸杂从杂质中纯化CdTe底物
- 作者：Kosyachenko L.A.;Zakharuk Z.I.;Rarenko A.I.;Nykonyuk E.S.
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- gettering;
- diffusion;
- substrate;
- breakdown layer;
- heat treatment;
4.Chemical dissolution of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductor compounds in the solutions of HNO_3-HCl-lactic acid system

机译：HNO_3-HCl-乳酸体系溶液中Ⅲ-Ⅴ和Ⅱ-Ⅵ族半导体化合物的化学溶解
- 作者：Tomashik V.N.;Tomashik Z.F.;Danylenko S.G.;Bilevych Ye.O.
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- polishing;
- dissolution;
- cadmium telluride;
- indium arsenide;
- indium antimonide;
- surface;
- activation energy;
5.Compensation in semi-intrinsic CdTe based materials

机译：半本征CdTe基材料的补偿
- 作者：V. Babentsov;Corregidor;J.L. Castano;E. Dieguez;M. Fiederle;T. Feltgen;K. Benz
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- CdTe:Cl;
- CdTe:Ga;
- CdZnTe;
- high resistivity;
- elementary defects;
- fermi-level stabilisation;
- EDAX mapping;
- photoluminescence;
6.Composite SiO based metal-dielectric films for sensitive elements of pyroelectric detectors of radiation

机译：用于辐射热释电探测器敏感元件的复合SiO 基金属介电膜
- 作者：Svetlana L. Bravina;Nicholas V. Morozovsky Alexander A. Strokach;Katerina V. Mikhailovskaya;Piotr E. Shepeliavyi;Ivan Z. Indutnyi
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- pyroelectric detectors;
- metal-dielectric composites;
- absorbing coatings;
7.DARK CURRENT AND NOISE IN In/Zn/p-InAs AND In-InAs

机译：In / Zn / p-InAs和In / n-InAs中的暗电流和噪声
- 作者：AV.Lubchenko;A.V.Sukach;S.A.Sypko;Z.F.Ivasiv;V.V.Tetyorkin;A.T.Voroschenko
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
8.DYNAMIC HALO SCATTERING IN PHOTOREFRACTIVE CRYSTALS

机译：光折射晶体中的动态光晕散射
- 作者：Anna Morozovska;Vyacheslav Obukhovsky
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- "dynamic halo";
- wave-coupling;
- photorefractive media;
- photovoltaic response;
9.Dynamic properties of inhomogeneous heating-induced polar states in noncentrosymmetric crystals

机译：非中心对称晶体中非均匀加热诱导的极性态的动力学性质
- 作者：V.F. Kosorotov;V. Blonsky;L. V. Shchedrina
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
10.Electron-positron annihilation in the narrow gap semiconductor Hg(1-x)Cd_xTe

机译：窄间隙半导体Hg（1-x）Cd_xTe中的电子-正电子an灭
- 作者：A.P. Kokhanenko;A.G. Korotaev;A.V. Voitsekhovskii
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- positron annihilation;
- defects;
- MCT;
- semiconductor;
11.Enhancement of Quantum Efficiency of Narrow Gap Semiconductors Infra-Red Emission

机译：窄间隙半导体红外发射的量子效率增强
- 作者：S.G.Gasan-zade;A.G.Kollyuch;L.F.Linnyk;G.A.Shepelskii;S.V.Staryj;M.V.Strikha;V.A.Boiko
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- narrow gap semiconductors;
- uniaxial compression;
- quantum efficiency;
- infra-red emission;
12.Ferromagnetic and ferroelectric phase transitions in IV-VI semiconductors

机译：IV-VI半导体中的铁磁和铁电相变
- 作者：G.V.Lashkarev;M.V.Radchenko
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- narrow-gap semiconductors A~(Ⅳ)B~(Ⅵ);
- RKKI interaction;
- ferroelectric ordering;
- thermoelectric power;
13.Ferromagnetism of structure disordered surface layers of molybdenum and zinc single crystals

机译：钼和锌单晶结构无序表面层的铁磁性
- 作者：A.V. Brodovoi;V.G. Kolesnichenko;V.V. Skorokhod;V.A. Brodovoi;O.S. Zinets
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
14.Gap deep defect states in narrow-gap semiconductors

机译：窄间隙半导体中的间隙深缺陷状态
- 作者：F. F. Sizov;S. D. Darchuk;A. G. Golenkov
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- narrow-gap semiconductors;
- deep defect states;
- recombination processes;
15.Heterostructure HgCdTe photovoltaic detectors

机译：异质结构HgCdTe光电探测器
- 作者：Antoni Rogalski
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
16.High infrared sensitivity of n-PbTe(Ga) thin films

机译：n-PbTe（Ga）薄膜的高红外灵敏度
- 作者：Boris A. Akimov;Vladislav A. Bogoyavlenskiy;Ludmila I. Ryabova;Vyaeheslav N. Vasilkov
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- IV-VI compounds;
- mixed-valence impurities;
- photoconductivity;
17.Hybrid and monolithic infrared detector arrays

机译：混合和整体红外探测器阵列
- 作者：C. Van Hoof;L. Zimmermann;J. John;P. De Moor;S. Kavadias;M. Gastal;S. Nemeth;G. Borghs;P. Merken
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- IR detection;
- hybrid integration;
- uncooled bolometers;
- surface micromachining;
- hermetic packaging;
18.INFLUENCE OF LIGHT HOLE BAND NONPARABOLICITY ON CdHgTe TRANSPORT PROPERTIES

机译：轻孔带非抛物线性对CdHgTe输运性能的影响
- 作者：Nikolas N.Berchenko;Igor I. Izhnin;Yulia S. Ilyina
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- Cd_xHg_(1-x)Te;
- InSb;
- nonparabolicity;
- transport properties;
19.INFLUENCE OF LOCAL DISTORTIONS OF CRYSTAL LATTICE ON MAGNETIC SUSCEPTIBILITY OF (InSb)_(1-x)(CdTe)_x SOLID SOLUTIONS

机译：晶格的局部畸变对（InSb）_（1-x）（CdTe）_x固溶体磁化率的影响
- 作者：A.V. Brodovoi;V.G. Kolesnichenko;V.V. Skorokhod;V.A. Brodovoi;L.M.Khnorozok;O.S.Zinets
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
20.In-situ kinetics study of gas phase formation in the system Ga/In-AsCI_3-HCl-H_2 by UV - spectroscopy

机译：Ga / In-AsCI_3-HCl-H_2体系中气相形成的原位动力学的紫外光谱研究
- 作者：V.A. Voronin;S.K. Guba;M.A. Litvin;A.Yu. Kulikov
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
21.INVESTIGATION OF GROWTH AND SOME PROPERTIES OF TELLURIUM COMPOUND WHISKERS

机译：碲复合晶须的生长和某些性质的研究
- 作者：S.S. Varshava;I.S.Virt;I.P.Ostrovskii;M.F.Bilyk
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- whisker;
- kinetic coefficient of crystallization;
- size effect;
22.INVESTIGATION OF SURFACE AND OXIDE-NARROW GAP SEMICONDUCTOR INTERFACE RUTHERFORD BACKSCATTEREVG METHOD

机译：表面和氧化物-间隙间隙半导体界面Rutherford BacksCATTEREVG方法的研究
- 作者：A.V. Voitsekhovskii;O.G. Lanskaya;E.P. Lilenko
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- MCT;
- RBS;
- transition region;
- stohiometry damage;
- MIS- structures;
23.IR photodetectors arrays based on HgCdTe films and GaAs/AIGaAs multiquantum wells

机译：基于HgCdTe薄膜和GaAs / AIGaAs多量子阱的红外光电探测器阵列
- 作者：V.N.Ovsyuk;Yu.G.Sidorov;V.V.Vasilyev;V.V.Shashkin
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
24.Isotherms of charge carrier mobility in Pb_(1-x)Mn_xTe alloys

机译：Pb_（1-x）Mn_xTe合金中载流子迁移率的等温线
- 作者：Elena I. Rogacheva;Igor M. Krivulkin
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
25.Laser Assisted Evaporation and Deposition of Mn_xHg_(1-x)Te Epitaxial Layers

机译：激光辅助蒸发和沉积Mn_xHg_（1-x）Te外延层
- 作者：Volodymyr Kavych;Leonid Mansurov;Maria Lozynska;Volodymyr Pysarevskij
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- epitaxial layer;
- laser assisted evaporation and deposition;
- Mn_xHg_(1-x)Te;
- CdTe;
26.Magnetic properties of Pb_(1-x)Ge_xTe alloys doped with ytterbium

机译：掺P的Pb_（1-x）Ge_xTe合金的磁性能
- 作者：Evgenii P.Skipetrov;Natalia A.Chernova;Ludmila A.Skipetrova;Evgenii I.Slynko
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- IV-VI semiconductors;
- magnetic ions;
- deep impurity levels;
27.MCT HETEROSTRUCTURES DESIGNING and GROWING by MBE for IR DEVICES

机译：MBE为IR设备设计和开发MCT异质结构
- 作者：Yu.G.Sidorov;S.A.Dvoretsky;N.N.Mikhailov;M.V.Yakushev;V.S.Varavin;V.V.Vasiliev;A.O.Suslyakov;V.N.Ovsyuk
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- MCT;
- MBE;
- growth;
- photoconductor;
- photodiode;
28.MECHANICAL STRAIN AND DEGRADATION OF LASER HETEROSTRUCTURES

机译：激光异质结构的机械应变和降解
- 作者：Alexander A. Ptashchenko;Fedor A. Ptashchenko;Natalia V. Maslejeva;Galina V. Sadova
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
29.MnHgTe Epitaxial Layers Grown by RF Sputtering in Mercury Glow Discharge

机译：汞辉光放电中通过射频溅射生长的MnHgTe外延层
- 作者：Leonid Mansurov;Volodymyr Kavych;Maria Lozynska;Alexey Nemolovsky;Igor Virt
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- MnHgTe;
- CdTe;
- layer;
- radio-frequency;
- glow discharge;
30.Multilayer coatings - the base for cryogenic infrared filters: technology, peculiarities and possibilities of application

机译：多层涂层-低温红外滤光片的基础：技术，特性和应用可能性
- 作者：Alla I. Belyaeva
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- cryogenic infrared filter;
- cryogenic multilayer coating;
- cut-on interference filter;
31.Negative differential photoconductivity of thin graded-band-gap layers in conditions of carrier extraction effect

机译：载流子提取效应条件下薄带隙层的负差分光电导
- 作者：Bogdan S. Sokolovsky;Volodymyr K. Pysarevsky;Olexiy V. Nemolovsky
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- photoconductivity;
- carrier extraction effect;
- inhomogeneneous semiconductors;
- thin semicomductor films;
32.2X64 linear LWIR arrays on the base of HgCdTe MBE grown layers and CCD silicon readouts

机译：基于HgCdTe MBE生长层和CCD硅读数的2X64线性LWIR阵列
- 作者：V. V. Vasilyev;S. A. Dvoretski;D. G. Esaev;T. I. Zahariyash;A. G. Klimenko;V. N. Obsyuk;Yu. G. Sidorov;F. F. Sizov;V. P. Reva;Yu. P. Derkach;S. G. Korinets;A. G. Golenkov;S. D. Darchuk;V. V. Zabudsky
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- infrared detectors;
- multielement arrays;
- silicon readout;
- detectivity;
33.4μm negative luminescence from p-InAsSbP-InAs diodes in the temperature range of 20-180°C

机译：p-InAsSbP / n-InAs二极管在20-180°C温度范围内产生4μm负发光
- 作者：M. Adaraliev;N.V. Zotova;S.A. Karandashev;B.A. Matveev;M.A. Remenniy;KM. Stus;G.N. Talalakin;V.K. Malyutenko;O. Yu. Malyutenko
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- InAs;
- InAsSbP;
- LPE;
- LEDs;
- negative luminescence;
- 2D infrared imaging;
34.On control the properties of bulk Hg_(1-x)Cd_xTe by laser induced shock waves

机译：激光诱导冲击波控制块体Hg_（1-x）Cd_xTe的性质
- 作者：Nicolas N. Berchenko;Vitaly S. Yakovyna;Yury N. Nikiforov;Igor S. Virt
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- shock waves;
- mercury-cadmium telluride;
- defects;
- shock wave stimulated annealing;
35.PHOTOELECTRIC CHARACTERISTICS OF INHOMOGENEOUS MIS-STRUCTURES IN BASE OF Si, HgCdTe

机译：Si，HgCdTe基体中非均质MIS结构的光电特性
- 作者：A.V. Voitsekhovskii;S.N. Nesmelov;N. A. Koulchitskii
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- photoelectric properties;
- Si-MIS structures;
- nonuniform distribution;
- local photo-emf;
36.PHOTOELECTRICAL PROPERTIES OF Hg_(1-x)Cd_xTe EPITAXIAL FILMS AND PHOTODIODES WITH COMPOSITION GRADING

机译：组成分级的Hg_（1-x）Cd_xTe外延膜和光电二极管的光电性能
- 作者：Z.F. Ivasiv;V.V. Tetyorkin
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- Hg_(1-x)Cd_xTe;
- composition gradient;
- infrared photodiode and photoresistor;
37.Photoluminescence in complex microporous-macroporous silicon structures

机译：复杂的微孔-大孔硅结构中的光致发光
- 作者：Lyudmila A. Karachevtseva;Oleq A. Lytvynenko;Yoshio Fukuda;Kazuo Furuya
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- microporous-macroporous silicon;
- photoluminescence;
- microstructure;
- local chemical states;
38.Photosensitivity of porous silicon based heterostructures

机译：多孔硅基异质结构的光敏性
- 作者：L.S.Monastyrskii;V.P.Savchyn;P.P.Parandii
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- porous silicon;
- photosensitivity;
- eterostructure;
- photovoltaic effect;
39.Polarization properties of the luminescence from silicon nanocrystals

机译：硅纳米晶体发光的偏振特性
- 作者：J. Diener;D. Kovalev;G. Polisski;F. Koch
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
40.Polishing of InSb in the K_2Cr_2O_7 - HBr - HC1 (oxalic acid) solutions

机译：在K_2Cr_2O_7-HBr-HCl（草酸）溶液中抛光InSb
- 作者：Tomashik V.N.;Kusiak N.V.;Tomashik Z.F.;Danylenko S.G.
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- polishing;
- dissolution;
- indium antimonide;
- surface;
- diffusion;
- activation energy;
41.Positive persistent photoconductivity in p-type

机译：p型正持久光电导
- 作者：W.Kraak;N.Ya.Minina;A.M.Savin;E.V.Bogdanov;A.A.Ilievsky;C.B.Sorensen;O.P.Hansen
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- GaAs/AlGaAs;
- persistent photoconductivity;
- inverted heterointerface;
42.SPECTRAL RESPONSIVITY OF HgMnTe PHOTODIODES

机译：HgMnTe光电二极管的光谱响应
- 作者：SUN WEIGUO;I.M. RARENKO;S.E. OSTAPOV;L.A. KOSYACHENKO
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- infrared detectors;
- HgMnTe photodiodes;
- photoelectric properties;
43.Study of chemical cutting process in narrow-gap semiconductors

机译：窄间隙半导体中化学切割工艺的研究
- 作者：MyhailoYu. Kravetskii;Oleksandr V. Fomin
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
44.Temperature dependences of electrical resistivity and thermoelectric power of SnTe thin films

机译：SnTe薄膜的电阻率和热电功率的温度依赖性
- 作者：Elena I. Rogacheva;Olga N. Nashchekina;Irina A. Korzh;Lidiya G. Voinova;Igor M. Krivulkin
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- tin telluride;
- thin films;
- electrical resistivity;
- thermoelectric power;
- temperature dependences;
- anomalies;
- quantum states;
45.Two characteristic series of the dislocation photoemission in CdSe and CdTe crystals

机译：CdSe和CdTe晶体中位错光发射的两个特征系列
- 作者：G.A.Shepelskii;N.I.Tarbaev
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- cadmium telluride;
- cadmium selenide;
- dislocation photoemission;
- deformation defects;
- one-dimensional structures;
46.Using of Anisotropic Optical Thermoelement of Inner Optical Reflection for Radiant Flow Registration in Visible and IR-Regions of Spectrum

机译：内光学反射的各向异性光学热元件在可见光和红外区的辐射流配准中的应用
- 作者：Ashcheulov A.A.;Gutsul I.V.;Nikolayenko Yu. Ye.;Rarenko A.I.
- 会议名称：《Material Science and Material Properties for Infrared Optoelectronics》 | 2001年
- thermo-emf;
- anisotropic optical thermoelement;
- radiant flow;