Structural perfection diagnostics of narrow-gap photosensitive semiconductors junctions by electron diffraction

摘要

In the work are studied structural, electrical and optical properties of film heterojunctions p-Pb_1-xTe - n-PbTe obtained by condensation of molecular beams in vacuum approx 10~-6 mm mercury pressure. It is determined that diffusion fringes intensity on diffraction patterns are different depending on thickness of films (d) and temperature of film growing (T_f). The intensity of iffusion fringes also depends on survey temperature (T_s). The correlation between intensity of diffusion fringes on electron diffraction patterns and photosensitivity of heterojunctions Pb_1-xSn_xTe-PbTe is found.