This paper mainly deals with electrical properties of the Al/KI/CdTe junction. CdTe alloy was prepared by special quenching of the melt in an evacuated tube. The KI solid electrolyte thin films used are polycrystalline and of 400 nm thickness. Capacitance - d.c. voltage (C-V) characteristics of the junction have been studied according to ideal (C-V) junction at frequencies range (100Hz - 400Hz). The hysteresies phenomena accured at all frequencies and it was interpreted in terms of low ionic conductivity in KI layer. The fast surface - state density in the depletion and near the accumulation regions is very low. A negative net of about (6.5X10~9)cm~(-2) was evaluated. The donor concentration of about (1.05X10~15)cm~(-3) was calculated.
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机译：本文主要研究Al / KI / CdTe结的电学性质。通过在真空管中对熔体进行特殊淬火来制备CdTe合金。所使用的KI固体电解质薄膜是多晶的并且具有400nm的厚度。电容-直流电已经根据理想的（C-V）结在频率范围（100Hz-400Hz）下研究了结的电压（C-V）特性。磁滞现象在所有频率下均会累积，并且可以用KI层中的低离子电导率来解释。耗尽区和堆积区附近的快速表面态密度非常低。评估约（6.5X10〜9）cm〜（-2）的负值。计算出供体浓度约为（1.05X10〜15）cm〜（-3）。
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