Modelling of convective melt flow and interface shape in commercial Bridgman-Stockbarger growth of CdZnTe

摘要

CdZnTe single crystals for radiation detector and IR substrate applications must be of high quality and controlled purity. The growth of such crystals from a melt is very difficult due to the low thermal conductivity and high latent heat of the material, and the ease with which dislocations, twins and precipitates are introduced during crystal growth. These defects may be related to solute transport phenomena and thermal stresses associated with the solidification process. As a result, production of high quality mateiral requires excellent thermal control during the entire growth process. a comprehensive model is being developed to account for radiation and conduction within the furnace, thermal coupling between the furnace and growth curcible, and finally the thermal stress fields within the growing crystal which results from the thermal conditions imposed on the crucible.