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Radial segregation induced by natural convection and melt/solid interface shape in vertical Bridgman growth

机译:垂直布里奇曼生长中自然对流和熔体/固体界面形状引起的径向偏析

摘要

The roles of natural convection in the melt and the shape of the melt/solid interface on radial dopant segregation are analyzed for a prototype of vertical Bridgman crystal growth system by finite element methods that solve simultaneously for the velocity field in the melt, the shape of the solidification isotherm, and the temperature distribution in both phases. Results are presented for crystal and melt with thermophysical properties similar to those of gallium-doped germanium in Bridgman configurations with melt below (thermally destabilizing) and above (stabilizing) the crystal. Steady axisymmetric flow are classified according to Rayleigh number as either being nearly the growth velocity, having a weak cellular structure or having large amplitude cellular convention. The flows in the two Bridgman configurations are driven by different temperature gradients and are in opposite directions. Finite element calculations for the transport of a dilute dopant by these flow fields reveal radial segregation levels as large as sixty percent of the mean concentration. Segregation is found most severe at an intermediate value of Rayleigh number above which the dopant distribution along the interface levels as the intensity of the flow increases.
机译:通过有限元方法分析垂直布里奇曼晶体生长系统的原型,分析了熔体中自然对流的作用以及熔体/固体界面的形状对径向掺杂剂偏析的影响,该方法同时求解熔体中的速度场,凝固等温线和两个阶段的温度分布。给出了具有类似于Bridgman构型的掺杂镓锗的热物理性质的晶体和熔体的结果,其熔体在晶体下方(热稳定)和在晶体上方(稳定)。根据瑞利数将稳定的轴对称流分类为接近于生长速度,具有弱的蜂窝结构或具有大幅度的蜂窝常规。两种Bridgman组态中的流由不同的温度梯度驱动,并且方向相反。通过这些流场进行的稀掺杂物传输的有限元计算显示出径向偏析水平高达平均浓度的60%。发现在瑞利数的中间值处最严重的分离,在瑞利数的中间值处,随着流动强度的增加,沿着界面水平的掺杂剂分布。

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    Chang C. J.; Brown R. A.;

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  • 年度 1983
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