A New Technology Process for Packaged Millimeter-Wave Si-Impatt Diodes

摘要

This paper presents a technology process which integrates a diode and its housing in a packaged millimeter-wave Si-IMPATT device. The housing consists of a high resistivity Si substrate, on which the MBE layer is grown. An etch stop in KOH is the key step in the process. The device is thermocompression bonded n a single step onto a diamond heat sink, unlike the three step bonding for conventional diodes with quartz ring housing.