FULLY WAFER LEVEL PROCESSED LIGHT EMITTING DIODE PACKAGE AND METHODS FOR MANUFACTURING A LIGHT EMITTING DIODE PACKAGE

摘要

PURPOSE: An LED package made with a wafer level and a manufacturing method thereof are provided to improve the performance and reliability of the LED package by suppressing local stress concentration. CONSTITUTION: A carrier substrate(100) includes a first via hole(101) and a second via hole(102). An epitaxial layer(200) is formed on the upper side of the carrier substrate. A first type electrode layer(210) is formed between the carrier substrate and the epitaxial layer. An epitaxial layer via(220) vertically passes through the epitaxial layer and the first type electrode layer. A second type electrode layer(230) is formed around the epitaxial layer via and on the upper side of the epitaxial layer.