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DESIGN OF A CMOS HEATER SUPPORT FOR THIN FILM GAS SENSORS

机译:薄膜气体传感器的CMOS加热器支持设计

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In this work, the design of an integrated heater support for thin film gas sensor is presented. The support, based on a micromachined bulk silicon, is carried out with a poly-p heater fully immersed in the silicon oxide and provided with 4 interdigital structures where the sensing thin film materials is deposited. With this structure formed by 4 sensor and a heater is possible to build a base module for a multi-sensing device and/or use its also as support for sensing material characterisation. This module present a digital standard voltage supply (5V), a low value of thermal time-constant (about 5 ms). an uniform temperature on all active sensing area, a low power dissipation for each sensor (< 15 mW in continuos regime at 280 °C) and a small dimension (1.2×1.2 mm2 for the heater global area and 4.2×4.2 mm2 for the entire chip).
机译:在这项工作中,提出了用于薄膜气体传感器的集成加热器支架的设计。以微加工的块状硅为基础的支撑是通过完全浸没在氧化硅中的poly-p加热器完成的,并提供4个叉指结构,用于沉积传感薄膜材料。通过由4个传感器和加热器形成的这种结构,可以构建用于多感测设备的基本模块和/或将其也用作感测材料特性的支持。该模块提供数字标准电压电源(5V),低的热时间常数(约5 ms)。所有活动感应区域上的温度均匀,每个传感器的功耗低(在280°C时连续状态下<15 mW)和小尺寸(加热器全局区域为1.2×1.2 mm2,整个区域为4.2×4.2 mm2芯片)。

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