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Hysteresis Effect in Floating-Body Partially-Depleted SOI CMOS Domino Circuits

机译:浮体部分耗尽的SOI CMOS Domino电路中的磁滞效应

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This paper investigates the basic mechanisms of hysteretic delay and noise margin variations for floating-body Partially-Depleted SOI CMOS domino circuits in detail. Three cases, based on whether the input signals are "domino input signals" from other domino circuits; "static input signals" from static circuits or latches; or a combination of "domino and static input signals" are examined and differentiated. It is shown that hysteretic delay variation is larger and noise margin worse for the later case with "mixed domino and static input signals." Although the delay and noise margin disparities between the three types of input signals are significant at beginning of the clock cycles, they converge as the circuit approaches steady-state.
机译:本文详细研究了浮体部分耗尽SOI CMOS多米诺骨牌电路的磁滞延迟和噪声容限变化的基本机制。基于输入信号是否为来自其他多米诺骨牌电路的“多米诺输入信号”的三种情况;来自静态电路或锁存器的“静态输入信号”;或“多米诺和静态输入信号”的组合进行检查和区分。结果表明,对于后面的“多米诺骨牌和静态输入信号混合”情况,滞后延迟变化较大,而噪声容限则较差。尽管三种类型的输入信号之间的延迟和噪声容限差异在时钟周期开始时就很明显,但随着电路趋于稳态,它们会收敛。

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