Fabrication of 3C-SiC on SiO_2 Structures Using Wafer Bonding Techniques

摘要

This paper presents the results of an effort to fabricate 3C-SiC on SiO_2 strucutres using wafer bonding techniques. The three bonding proceses that were developed use: (1) polysilicon-to-SiO_2; (2) polysilicon-to-Si; and (3) polysilicon-to-polysilicon bonds to create 3C-SiC on SiO_2 structures. The 3C-SiC transfer yield ranged from 35 to 80percent, with the polysilcon-to-polysilicon bonding technique producing the highest yields. Analysis of the delaminated regions using SEM showed that failures occurred only at the bonding interface, not the 3C-SiC/SiO_2 interface. SiC films grown on the 3C-SiC on SiO_2 strucutres have a homoepitaxial relationship with the 3C-SiC on SiO_2 strucutre and have a lower defect density than the underlying substrate.