KEY ADVANCES IN Si DEVICE PHYSICS AND TECHNOLOGY:ALL ABOUT THE INTRINSIC LAYER

摘要

Process reproducible as good diode characteristics was studied at the beginning of point contact transistor and after various trial, insertion of insulating thin layer between metal and semiconductor, studied by Jouse, seemed to be only one solution. As the mechanism of the phenomenon, hot carriers, induced by higher field, was thought to be injected into the insulator, which directly suggested the ideal insulator as the intrinsic semiconductor material. Then, we found the structure of in-, ip- and pin-diode, pnip and npin transistor, SIT and SI Thyristor in 1950. As a technology to obtain i-layer, we also proposed in 1950 ion implantation, electrolytic treatment and others. Dislocation free crystal was prepared for the ULSI, and I found the mechanism of crystal growth was not by screw dislocations but as the theory by Kossel. Recently point defect has been studied with relation to trapping and impurity diffusion. As the very fast and efficient device, we have been studying ballistic devices, using molecular layer epitaxy as thick as several tens A.