Graphene based transistors

摘要

Graphene is a single-atom thick layer of graphite, which is one of the well known allotropes of carbon. While Graphene is a 2-D material, it can be either rolled-up to form carbon nanotubes (CNT) or simply patterned to form graphene nano-ribbons (GNR), which essentially display 1-D transport characteristics. Due to their outstanding electrical properties, CNTs and GNRs are considered as a possible replacement for Silicon. This talk will start with a brief overview of the physics of these carbon nanomaterials, discuss various device structures--their relative advantages and drawbacks and their fabrication related challenges. It will then discuss various design challenges arising due to the chirality problem (presence of metallic CNTs in CNFETs), ambipolar conduction in both CNFET and GNRFET, edge scattering in GNRFETs, channel quantization/screening effect in CNFETs, and source/drain extension and other parasitics that play a central role in restricting the performance of these transistors wellbelow their theoretically predicted limits. This talk will conclude with a brief discussion of the scaling implications and comparison with conventional CMOS to provide a possible roadmap into the future.