首页> 外文会议>international conference on positron annihilation;ICPA-10 >AUGER LINE SHAPE OF M_(2,3) VV MEASURED WITH POSITRON ANNIHILATION INDUCED AUGER ELECTRON SPECTROSCOPY
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AUGER LINE SHAPE OF M_(2,3) VV MEASURED WITH POSITRON ANNIHILATION INDUCED AUGER ELECTRON SPECTROSCOPY

机译:用正电子AN灭诱导的俄歇电子能谱测量M_(2,3)VV的俄歇线形

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Positron annihilation induced Auger spectroscopy (PAES) utilizes matter-antimatter annihilation to create the core-holes necessary for Auger transitions. Therefore it is possible to eliminate background due to collisionally induced secondary electrons by setting the incident positron beam energy below that of the Auger electrons. Previous measurements indicate that the background-free Auger line shapes obtained using PAES differ significantly from the ones obtained using electron excitation and conventional background subtraction techniques. However quantitative PAES line shape analysis has been hampered due to the lack of energy resolution of the original PAES system. A new PAES spectrometer has been developed in our lab with an energy resolution, △E/E = 2%, an order of magnitude better than previous PAES spectrometers. The high-resolution PAES system has been used to measure the Auger M_(2,3)VVline shape from a clean polycrystalline Cu surface. The atomic-like Auger M_2VV and M_3VV features are clearly resolved and separated by 2.4 eV, a value which is consistent with the published electron induced Auger measurements. The spectral intensity at the low energy tail of M_(2,3)VV in our PAES measurement suggests a non-trivial contribution from the "band-like" components of the Auger transition and intrinsic losses, and also suggests that previous modeling of the secondary electron background leads to an underestimate of the low energy tail of the Auger line shape.
机译:正电子an没感应俄歇光谱(PAES)利用物质-反物质atter灭来创建俄歇跃迁所需的芯孔。因此,通过将入射的正电子束能量设置在俄歇电子的能量以下,可以消除由于碰撞感应的二次电子引起的背景。先前的测量表明,使用PAES获得的无背景俄歇线形状与使用电子激发和常规背景扣除技术获得的无背景俄歇线形状显着不同。但是,由于缺乏原始PAES系统的能量分辨率,因此无法进行定量PAES线形分析。我们实验室已开发出一种新型PAES光谱仪,其能量分辨率△E / E = 2%,比以前的PAES光谱仪好一个数量级。高分辨率PAES系统已用于从干净的多晶Cu表面测量俄歇M_(2,3)VVline形状。原子状的俄歇M_2VV和M_3VV特征已清晰分辨并相隔2.4 eV,该值与已发布的电子感应俄歇测量值一致。在我们的PAES测量中,M_(2,3)VV的低能量尾部的光谱强度表明,俄歇跃迁的“带状”成分和固有损耗具有非凡的贡献,并且还暗示了以前的模拟二次电子背景会导致低估俄歇线形的低能尾巴。

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