首页> 外文期刊>Bulletin of the American Physical Society >APS -APS March Meeting 2017 - Event - Detailed line shape analysis of the C KVV Auger peak of two carbon allotropes measured using a time of flight positron annihilation induced Auger electron spectrometer
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APS -APS March Meeting 2017 - Event - Detailed line shape analysis of the C KVV Auger peak of two carbon allotropes measured using a time of flight positron annihilation induced Auger electron spectrometer

机译:APS -APS 2017年3月会议-活动-使用飞行时间正电子an灭感应俄歇电子能谱仪测量的两个碳同素异形体的C KVV俄歇峰的详细线形分析

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We report a detailed line shape analysis of the positron induced C KVV Auger line shape from highly oriented pyrolytic graphite (HOPG) and a single layer of graphene grown on polycrystalline Cu. A model consisting of the self-fold of the one-electron density of states including terms for hole-hole interactions, charge screening effects, and intrinsic loss mechanisms is compared to experimental C KVV line shapes measured using a positron induced Auger electron spectrometer (PAES). In traditional Auger spectroscopies which use an electron or photon to initiate the Auger process, extracting the relatively small Auger signal from the large secondary background can be quite difficult. Using a very low energy positron beam to create the core hole through an anti-matter matter annihilation entirely eliminates this background. Additionally, PAES has sensitivity to the top most atomic layer since the positron becomes trapped in an image potential well at the surface before annihilation. Therefore, the PAES signal from a single layer of graphene on polycrystalline Cu is primarily from the graphene overlayer with small contributions from the Cu substrate while the PAES signal from HOPG can be viewed as a single graphene layer with a graphite substrate. The influence of these two substrates on C KVV line shape is discussed.
机译:我们报告了由高度取向的热解石墨(HOPG)和在多晶Cu上生长的单层石墨烯对正电子引起的C KVV Auger线形的详细线形分析。将由包括空穴-空穴相互作用,电荷屏蔽效应和本征损耗机理的项在内的单电子态态自折叠组成的模型与使用正电子感应俄歇电子能谱仪(PAES)测量的实验C KVV线形进行比较)。在使用电子或光子启动俄歇过程的传统俄歇光谱学中,从较大的次级本底中提取相对较小的俄歇信号可能非常困难。使用极低能量的正电子束通过反物质an灭来创建芯孔,完全消除了这种背景。另外,PAES对最顶层的原子层具有敏感性,因为在an没之前,正电子被困在表面的图像势阱中。因此,来自多晶Cu上单层石墨烯的PAES信号主要来自石墨烯上层,而Cu衬底的贡献很小,而来自HOPG的PAES信号可被视为具有石墨衬底的单层石墨烯。讨论了这两种基板对C KVV线形的影响。

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