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IDENTIFICATION AND CHARACTERIZATION OF SILICON IN FUSED QUARTZ TUBING

机译:石英石英管中硅的鉴定与表征

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Type 1 fused quartz tubing melted under a hydrogen/helium atmosphere is known to contain trace concentrations of reduced silica, namely oxygen deficient SiO_(2-x). The ultraviolet absorption band, centered at 242 nm, is characteristic of fused quartz melted under the reducing conditions of a hydrogen melting atmosphere. TEM and electron diffraction measurements show that silicon can also form during the quartz melting process, and crystallize on cooling. These silicon particles were observed during quartz flameworking as "glow bands". The higher emissivity of silicon results in greater incandescence compared with the fused quartz matrix. Silicon was found to increase UV absorption within the range 170 nm - 230 nm, with peaks at about 176 nm and 204 nm The strong oxygen-deficient silica band at 242 nm was unaffected by the fully reduced silicon crystallites. Absorption is due to the generation of additional E' defect centers [6.1 eV], and probably to the formation of silicon clusters [7.1 eV].
机译:已知在氢气/氦气气氛下熔化的1型熔融石英管包含痕量的还原二氧化硅,即缺氧SiO_(2-x)。以242nm为中心的紫外线吸收带是在氢熔融气氛的还原条件下熔融的熔融石英的特征。 TEM和电子衍射测量表明,硅也可能在石英熔化过程中形成,并在冷却时结晶。在石英火焰加工过程中观察到这些硅颗粒为“辉光带”。与熔融石英基体相比,硅的较高发射率导致更大的白炽度。发现硅可增加170 nm-230 nm范围内的UV吸收,在约176 nm和204 nm处具有峰值。在242 nm处的强缺氧二氧化硅带不受完全还原的硅微晶的影响。吸收是由于产生了额外的E'缺陷中心[6.1 eV],并且可能是由于形成了硅团簇[7.1 eV]。

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