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IDENTIFICATION AND CHARACTERIZATION OF SILICON IN FUSED QUARTZ TUBING

机译:熔融石英管中硅的识别与表征

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Type 1 fused quartz tubing melted under a hydrogen/helium atmosphere is known to contain trace concentrations of reduced silica, namely oxygen deficient SiO_(2-x). The ultraviolet absorption band, centered at 242 nm, is characteristic of fused quartz melted under the reducing conditions of a hydrogen melting atmosphere. TEM and electron diffraction measurements show that silicon can also form during the quartz melting process, and crystallize on cooling. These silicon particles were observed during quartz flameworking as "glow bands". The higher emissivity of silicon results in greater incandescence compared with the fused quartz matrix. Silicon was found to increase UV absorption within the range 170 nm - 230 nm, with peaks at about 176 nm and 204 nm The strong oxygen-deficient silica band at 242 nm was unaffected by the fully reduced silicon crystallites. Absorption is due to the generation of additional E' defect centers [6.1 eV], and probably to the formation of silicon clusters [7.1 eV].
机译:型1型熔融石英管在氢气/氦气气氛下熔化,已知含有痕量二氧化硅的痕量浓度,即缺氧SiO_(2-x)。以242nm为中心的紫外线吸收带是在氢气熔化气氛的还原条件下熔化的熔融石英的特征。 TEM和电子衍射测量表明,硅还可在石英熔化过程中形成,并在冷却时结晶。在石英浆洗涤期间观察到这些硅颗粒作为“发光带”。与融合的石英基质相比,硅的较高发射率导致更大的白炽。发现硅在170nm-230nm的范围内增加UV吸收,在约176nm和204nm处,242nm处的强氧缺陷二氧化硅带的峰不会受到完全减少的硅结晶的影响。吸收是由于额外的E'缺陷中心[6.1eV]的产生,并且可能形成硅簇的形成[7.1ev]。

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