Suppression of the Parasitic Bipolar Transistor in Deep Sub-Micron MOSFETs by the Use of a Narrow Band-Gap, SiGe Source

摘要

We demonstrate here the principle of the application of reverse heterojunction engineering for the suppression of the parasitic bipolar transistor in deep sub-micron MOSFETs. Simulation results using the TMA-MEDICI package, based on a deep sub-micron vertical MOSFET structure, demonstrated the efficacy of using a narrow band-gap SiGe source. The breakdown voltage induced by the parasitic bipolar can be increased by up to 60% with a SiGe source of only 10% Ge.