Burst Noise And Tunneling Currents In Lattice-Mismatched InP/InGaAs/InP Photodetector Arrays

摘要

Burst noise (BN) and reverse current are studied in lattice-mismatched InP/ InGaAs/InP photodiodes. BN is related to the presence of an excess current (EC) which sometimes exhibits a clear tunneling behavior. The mean pulse widths, the BN amplitude and the EC are thermally activated. The results suggest that the BN is due to the EC which flows through a crystalline defect and is modulated by an action of a small lattice defect located at the leakage site. Influence of some substrate and lattice-mismatch defects is discussed.